Characterization and Modeling of SiC based Positive Output Super Lift Luo Converter
نویسندگان
چکیده
A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFET is simulated to show the effectiveness of the switch at the prolonged temperature. SiC based multistage super lift Luo converter is simulated for analyzing the performance of the converter in terms of energy factor, pumping factor, storage factor, ripple factor and efficiency.
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